Samsung 9100 PRO 4TB - MZ-VAP4T0BW - M.2 2280 NVMe PCIe Gen5 x4
4TB M.2 2280 NVMe SSD PCIe 5.0 x4: up to 14,800/13,400 MB/s read/write, 2.2M/2.6M IOPS. Samsung Presto controller, V8 V-NAND TLC, DRAM cache. Ideal for gaming, AI, content creation.
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The Samsung 9100 PRO MZ-VAP4T0BW is a cutting-edge PCIe 5.0 NVMe SSD delivering breakthrough performance with sequential read/write speeds up to 14,800/13,400 MB/s—twice as fast as the 990 PRO. Random speeds reach 2,200K/2,600K IOPS, powered by Samsung’s 5nm Presto controller, V8 V-NAND TLC, and LPDD4X DRAM cache for superior handling of gaming, AI workloads, and content creation.
Featuring exceptional thermal efficiency with up to 49% better power efficiency over predecessors, it maintains peak performance without interruption. The single-sided M.2 2280 design suits PCs, laptops, and even PS5. Includes Samsung Magician software for optimization, data migration, health monitoring, and firmware updates. 5-year warranty and high TBW ensure reliability.
- ✅ PCIe 5.0 x4 interface with NVMe
- ✅ Up to 14,800 MB/s read, 13,400 MB/s write
- ✅ 2.2M/2.6M random IOPS
- ✅ DRAM cache & TurboWrite 2.0
- ✅ 256-bit AES encryption, S.M.A.R.T., TRIM
- ✅ No heatsink (bare drive)
| Security algorithms | 256-bit AES |
| SSD capacity | 4 TB |
| SSD form factor | M.2 |
| Interface | PCI Express 5.0 |
| NVMe | Yes |
| Memory type | V-NAND TLC V8 |
| Component for | PC/Laptop |
| Hardware encryption | Yes |
| Read speed | 14800 MB/s |
| Write speed | 13400 MB/s |
| Random read (4KB) | 2200000 IOPS |
| Random write (4KB) | 2600000 IOPS |
| PCI Express interface data lanes | x4 |
| S.M.A.R.T. support | Yes |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
| Operating voltage | 3.3 V |
| Width | 80.2 mm |
| Depth | 2.38 mm |
| Height | 22.1 mm |
| Weight | 9 g |
| Package type | Box |
| Operating temperature (T-T) | 0 - 70 °C |
| Operating shock | 1500 G |
| Warranty period | 5 year(s) |
| DRAM Cache | Yes (LPDD4X) |
| Controller | Samsung Presto (5nm) |